Photosensitive polyimide resin composition and method of manufacturing cover film using the same

ABSTRACT

A photosensitive polyimide resin composition is provided. The resin composition comprises an infrared absorber, an epoxy, a photosensitive polyimide and a photo initiator. The infrared absorber includes pigment and has an amount of weight accounting for 5-40% of total solid weight of the photosensitive polyimide resin composition. The epoxy has an amount of weight accounting for 5-40% of total solid weight of the photosensitive polyimide resin composition. The photosensitive polyimide has the structure of formula (1): 
     
       
         
         
             
             
         
       
         
         
           
             wherein m, n are independently 1 to 600; X is a tetravalent organic group, and the main chain of X includes alicyclic structure; Y is a divalent organic group, and the main chain of Y includes siloxane structure; Z is a divalent organic group, and the side chain of Z includes phenolic hydroxyl group or carboxyl group. The photosensitive polyimide has an amount of weight accounting for 30-90% of total solid weight of the photosensitive polyimide resin composition. The photo initiator has an amount of weight accounting for 0.1-15% of total solid weight of the transparent photosensitive resin.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention discloses a photosensitive polyimide resincomposition, in particular a fast crosslinking type photosensitivepolyimide resin composition.

Description of the Prior Art

The conventional photosensitive polyimide is derived from itsprecursor—polyamic acid or polyamide ester, which, after the lithographyprocess, requires curing at a high temperature of 350° C. to formpolyimide. For copper lines, heating to 350° C. would cause oxidationproblems.

Another soluble photosensitive polyimide material can be used forhigh-order flexible substrate cover films. Refer to U.S. PatentPublication Nos. US2003/0176528, US2004/0247908, US2004/0265731 orUS2004/0235992. Although this type of soluble photosensitive polyimidecan be cured at a low temperature of 230° C., the flame retardantproperty thereof is poor since the content of the photosensitivemolecule (acrylate) is too high, Therefore, it is needed to add theflame retardant containing phosphorus or halogen, which does not meetthe environment protection trend of halogen-free and phosphorus-free inthe future. Though the hard baking temperature of the soluble PSPImaterial is lower, its solvent resistance is generally poor, and a highconcentration of alkaline developer is required for the development,resulting in low practicality.

Another soluble polyimide having a —COOH group on its main chain wasproposed by Masao Tomoi et al, in the journal of Reactive & FunctionalPolymers, 2003(56), p. 59-73 as well as Japanese Patent Publication Nos.JP2002341535 and JP2003345007. The acrylic acid (ester) monomer with thetertiary amine group was used to ionically bond to the —COOH group toform the negative type PSPI material. However, the ionic bonding of theacrylic acid (ester) monomer with the —COOH group required hightemperature and long baking, and there are still some problems.

SUMMARY OF THE INVENTION

The present invention provides a photosensitive polyimide resincomposition, which is prepared by adding to a photosensitive polyimidean infrared absorber having the maximum absorption and the minimumabsorption in a specific wavelength range, thereby resolving theproblems of high temperature and long baking required in theconventional polyimide process.

According to an embodiment of the present invention, a photosensitivepolyimide resin composition is provided. The resin composition comprises(a) an infrared absorber, (b) an epoxy compound, (c) a photosensitivepolyimide, and (d) a photo initiator. The infrared absorber is a dye ora pigment, has a maximum absorption wavelength of 500-4000 nm in asolvent and a heat conversion rate of greater than 70%, and accounts for5-40% of the solid weight of the photosensitive polyimide resincomposition. The epoxy compound accounts for 5-40% of the solid weightof the photosensitive polyimide resin composition. The photosensitivepolyimide has a structure of formula (1):

wherein m and n are independently 1 to 600; X is a tetravalent organicgroup, a main chain of which contains an alicyclic group; Y is adivalent organic group, a main chain of which contains a siloxane group;Z is a divalent organic group, a side chain of which at least contains aphenolic group or a carboxyl group; and the photosensitive polyimideaccounts for 30-90% of the solid weight of the photosensitive polyimideresin composition. The photo initiator accounts for 0.1-15% of the solidweight of the photosensitive polyimide resin composition.

In an embodiment, the dye serving as the infrared absorber is a metalcomplex dye or a condensed polycyclic dye.

In an embodiment, the pigment serving as the infrared absorber is anorganic pigment or an inorganic pigment.

In an embodiment, the epoxy compound is neopentyl glycol diglycidylether, 1,4-butanediol diglycidyl ether, 1,2-cyclohexanedicarboxylic aciddiglycidyl ester, bisphenol A diglycidyl ether, 1,2-propanedioldiglycidyl ether, trimethylolpropane triglycidyl ether, glyceroltripropoxy triglycidyl ether, m-benzenediol diglycidyl ether, or acombination thereof.

In an embodiment, X in the polyimide of formula (1) doesn't contain abenzene ring.

In an embodiment, X in the polyimide of formula (1) is

In an embodiment, Y in the polyimide of formula (1) is

wherein p=0-20.

In an embodiment, the phenolic group or the carboxyl group of Z in thepolyimide of formula (1) accounts for 5-30% of the total number of molesof the photosensitive polyimide.

In an embodiment, Z in the polyimide of formula (1) is

In an embodiment, the photo initiator isbis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,2-phenylmethyl-2-dimethylamino-1-1-(4-morpholinophenyl)-butanone,(2,4,6-trimethylbenzyl)diphenylphosphine oxide,bis(2,6-difluoro-3-(1-hydropyrro-1-yl)-phenyl)titanocene,4,4′-bis(dimethylamino)diphenyl ketone, 4,4′-bis(diethylamino) diphenylketone, or N-phenyl diethanolamine.

The photosensitive polyimide resin composition described above can beused to for an insulating film.

A method for manufacturing a cover film is further provided by thepresent invention. The cover film is obtained by coating thephotosensitive polyimide resin composition described above on asubstrate and then drying the photosensitive polyimide resincomposition.

In an embodiment, the substrate surface has a color and can absorbinfrared rays having a wavelength of 500-4000 nm, and the drying iscarried out by irradiating the photosensitive polyimide resincomposition with an infrared lamp emitting the infrared rays having awavelength of 500-4000 nm for curing.

In an embodiment, the infrared lamp described above includes theinfrared halogen lamp, the infrared quartz tube, and the infraredblackbody tube.

In the present invention, the addition of the infrared absorber to thephotosensitive polyimide resin composition can solve the problem thatthe formation of ionic bonding between the acrylic acid (ester) monomerand the —COOH group requires high temperature and long baking, therebymeeting the needs for high-order flexible substrate having high densityand fine lines.

The foregoing and other aspects of the present invention will be clearerfrom the following detailed description of the embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The present invention provides a photosensitive polyimide resincomposition having a photosensitive polyimide of a particular molecularstructure as the main component and solves the problems of hightemperature and long baking during shaping by adding the infraredabsorber.

The photosensitive polyimide resin composition of the present inventionmay further be added the thermal crosslinking agent having a phenoliccompound or an alkoxymethylamine resin in its structure so that theterminal group on the molecular chain of the polyimide forms acrosslinking structure with the thermal crosslinking agent in order toimprove the chemical resistance and film-forming capability of thepolyimide. The acrylic resin photocrosslinking agent may also be addedto produce the acid upon exposure, thereby forming the acid-catalyzedcrosslinking mechanism.

The photosensitive polyimide resin composition of the present inventioncomprises (a) an infrared absorber, (b) an epoxy compound, (c) aphotosensitive polyimide, and (d) a photo initiator.

The infrared absorber of the component (a) comprises dyes and pigments,and the dyes having a maximum absorption wavelength of 500 to 1000 nm,preferably 700 to 1000 nm, and more preferably 800 to 1000 nm, may beused. The dye used may include the metal complex dyes or the condensedpolycyclic dyes, such as the phthalocyanine dyes, the porphyrin dyes,the cyanine dyes, the Quaterrylene dyes, the squaraine dyes, the azodyes, the ammonium dyes, the anthraquinone series, the diimine series,the naphthalocyanine dyes, the nickel complex dyes, the copper ion dyes,the dithiol metal complexes, the heterocyclic compounds, and the like,among which the heterocyclic compounds, the Quaterine dyes, thephthalocyanine dyes, and the naphthalocyanine dyes that also haveabsorption in the range of visible light are preferred. The actualproducts of dyes are, for example, SDO-C8, SDO-C33, Lumogen IR 765,Lumogen IR 788, and the like. Further, it is preferred that the dye hasthe maximum absorption in the above wavelength range, can efficientlyabsorb light, has a sensitizing effect, and contains the metal complex.One or more of the dyes described above may be used as the infraredabsorber of the present invention.

The pigment serving as the infrared absorber of the present inventioncomprises the organic pigment and the inorganic pigment. Among theorganic pigments, the phthalocyanine series, dioxazine series, andperylene series are preferred due to their excellent photo-curingproperty, coloring property, and shading property in the range ofvisible light. Specific and preferred examples include Pigment Blue ofthe phthalocyanine series, Lumogen Black FK4280 and Lumogen Black FK4281of the perylene series, and PigmentViolet 23 and 37 of the oxazineseries. The pigments mentioned above may be used alone or in propercombination with two or more of others. The inorganic pigments comprisecobalt(II,III) oxide, titanium black, carbon black, etc., and may beused alone or in proper combination with two or more of others. In thephotosensitive resin composition of the present invention, the contentof the infrared absorber (a) accounts for 0.5 to 40% of the solid weightof the photosensitive polyimide resin composition.

The main purpose of the addition of (b) epoxy compound is to make theepoxy compound crosslink with the —OH group or —COOH group on the mainchain or the ortho position of the terminal —OH group or —COOH group ofthe photosensitive polyimide through acid catalysis or heat treatmentduring hard baking after the exposure. The content of the epoxy compoundaccounts for about 5 to 40% of the solid weight of the photosensitivepolyimide resin composition. If it is less than 5%, then the hard-bakedproduct will be insufficiently crosslinked and less resistant tochemical solvents; and if it exceeds 40%, then the developability ispoor. The epoxy compound may be neopentyl glycol diglycidyl ether,1,4-butanediol diglycidyl ether, 1,2-cyclohexanedicarboxylic aciddiglycidyl ester, bisphenol A diglycidyl ether, 1,2-propanedioldiglycidyl ether, trimethylolpropane triglycidyl ether, glyceroltripropoxy triglycidyl ether, m-benzenediol diglycidyl ether, or anycombinations thereof.

The photosensitive polyimide of component (c) is the photosensitivepolyimide having the structure of formula (1):

in which m and n are independently 1 to 600. X is a tetravalent organicgroup, the main chain of which contains the alicyclic group, preferablythe alicyclic group having no benzene ring, including (but not limitedto)

Y is a divalent organic group, a main chain of which contains thesiloxane group, such as:

in which the chain length of Y is preferably short (p=0), and thelongest chain length of Y may be p=20. If the chain length is too long,the properties of the polyimide will be deteriorated. Z is a divalentorganic group, a side chain of which at least contains the phenolicgroup or carboxyl group. The phenolic group or the carboxyl groupapproximately accounts for 5 to 30% of the number of moles of thepolyimide. The development time may be controlled by adjusting the molarratio of the side chain cover group, and when the content of thebranched phenol group or carboxyl group is high, the alkaline developeris preferred due to its better solubility and may improve thedevelopability. Z may include, but not be limited to, the followinggroups:

The synthesis steps of the photosensitive polyimide of component (c)were carried out by dissolving appropriate amount of the diamine monomerand the dianhydride monomer in N-methylpyrrolidone (NMP), followed byaddition of another diamine monomer containing the phenol or carboxylgroup to react at 80° C. for 2 hours, followed by addition of xylene andheating to 180° C. for 4 hours to obtain the distillate, which was thencooled. The amount of the photosensitive polyimide accounts for 30-90%of the solid weight of the photosensitive polyimide resin composition.

The amount of the photo initiator of component (d) accounts for 0.1-15%of the solid weight of the photosensitive polyimide resin composition.For example, the photo initiator may be selected from the followingcompounds: bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide,2-phenylmethyl-2-dimethylamino-1-1-(4-morpholinophenyl)-butanone,(2,4,6-trimethylbenzyl)diphenylphosphine oxide,bis(2,6-difluoro-3-(1-hydropyrro-1-yl)-phenyl)titanocene,4,4′-bis(dimethylamino)diphenyl ketone, 4,4′-bis(diethylamino) diphenylketone, or N-phenyl diethanolamine.

The method for preparing the photosensitive polyimide resin compositionof the present invention was carried out by adding the infraredabsorber, the epoxy compound, and the photo initiator into thephotosensitive polyimide colloid prepared above to obtain thephotosensitive polyimide resin composition.

The photosensitive polyimide resin composition of the present inventionwas coated on the substrate, and then dried and shaped to form the coverfilm. The method for shaping had two steps. After the resin compositionwas coated on the substrate, the soft baking (pre-baking) was carriedout first at a temperature of about 100° C. for about 10 minutes to forma film, which was then exposed to, e.g., ultraviolet light and developedto leave the desired pattern. The composition was further subjected tohard baking and drying after development to allow the epoxy compound inthe composition to be sufficiently crosslinked with other ingredientsfor avoiding peeling. The method of drying might be carried out, forexample, by using the infrared lamp emitting infrared rays having awavelength of 500-4000 nm at a temperature of 180 to 200° C. for anirradiation time of 10 to 30 minutes. The infrared lamp might beselected from the infrared halogen lamp, the infrared quartz tube, orthe infrared blackbody tube.

EXAMPLE 1

19.88 g (80 mmol) of 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 80.7 g ofN-methylpyrrolidone (NMP), 39.68 g (160 mmol) ofbicyclo[2,2,2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, and 21.14 g(80 mmol) of 2-(2-Methacryloyloxy)ethyl 3,5-diamino benzoate were addedInto a 500 ml three-necked round bottom flask equipped with themechanical stirrer and nitrogen inlet to form a solution. The solutionwas reacted at 50 to 80° C. for 2 hours. Afterwards, 45 g of xylene wasadded and the temperature was risen to 180° C. The mixture was keptstirring for 4 hours and then cooled to give a PIA-1 solution. 11.38 gof glycidyl methacrylate (GMA) was added into 50 g of the PIA-1solution, which was then stirred at 70 to 100° C. for 24 hours to givethe polyimide PSPI-1.

The structure of PSPI-1 was represented by formula (1) above, wherein Xis

Y is

and p=0, Z is

and m=n=120.

0.30 g of the infrared absorber (SDO-C33), 3.00 g ofbis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, and 7.50 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR1. PSPI-IR1 as coated on the substrate by using a wire bar. Afterthe pre-baking procedure at 90° C. in the oven for 8 minutes, a filmhaving a film thickness of about 15 μm was obtained. The film was thenexposed to energy of about 400 mJ/cm² from the exposure machine (with apower of 7 kW) and then developed with 1 wt % (by weight) of sodiumcarbonate developer for 1 minute. After that, the hard baking procedurewas carried out at a wavelength of 500 nm to 4000 nm for 10 to 30minutes to obtain a developed pattern with heat resistance.

EXAMPLE 2

3.00 g of the infrared absorber (SDO-033), 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, and 7.50 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR2. PSPI-IR2 was coated on the substrate by using a wire bar.After the pre-baking procedure at 90° C. in the oven for 8 minutes, afilm having a film thickness of about 15 μm was obtained. The film wasthen exposed to energy of about 400 mJ/cm² from the exposure machine(with a power of 7 kW) and then developed with 1 wt % (by weight) ofsodium carbonate developer for 1 minute. After that, the hard bakingprocedure was carried out at a wavelength of 500 nm to 4000 nm for 10 to30 minutes to obtain a developed pattern with heat resistance.

EXAMPLE 3

3.00 g of the infrared absorber (carbon black), 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, and 7.50 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR3. PSPI-R3 was coated on the substrate by using a wire bar. Afterthe pre-baking procedure at 90° C. in the oven for 8 minutes, a filmhaving a film thickness of about 15 μm was obtained. The film was thenexposed to energy of about 400 mJ/cm² from the exposure machine (with apower of 7 kW) and then developed with 1 wt % (by weight) of sodiumcarbonate developer for 1 minute. After that, the hard baking procedurewas carried out at a wavelength of 500 nm to 4000 nm for 10 to 30minutes to obtain a developed pattern with heat resistance.

EXAMPLE 4

3.00 g of the infrared absorber (SDO-033), 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, and 24.00 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR4. PSPI-IR4 was coated on the substrate by using a wire bar.After the pre-baking procedure at 90° C. in the oven for 8 minutes, afilm having a film thickness of about 15 μm was obtained. The film wasthen exposed to energy of about 400 mJ/cm² from the exposure machine(with a power of 7 kW) and then developed with 1 wt % (by weight) ofsodium carbonate developer for 1 minute. After that, the hard bakingprocedure was carried out at a wavelength of 500 nm to 4000 nm for 10 to30 minutes to obtain a developed pattern with heat resistance.

EXAMPLE 5

3.00 g of the infrared absorber (SDO-033), 0.30 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, and 7.50 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR5. PSPI-R5 was coated on the substrate by using a wire bar. Afterthe pre-baking procedure at 90° C. in the oven for 8 minutes, a filmhaving a film thickness of about 15 μm was obtained. The film was thenexposed to energy of about 400 mJ/cm² from the exposure machine (with apower of 7 kW) and then developed with 1 wt % (by weight) of sodiumcarbonate developer for 1 minute. After that, the hard baking procedurewas carried out at a wavelength of 500 nm to 4000 nm for 10 to 30minutes to obtain a developed pattern with heat resistance.

COMPARATIVE EXAMPLE 1

3.00 g of bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 24 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR6. PSPI-IR6 was coated on the substrate by using a wire bar.After the pre-baking procedure at 90° C. in the oven for 8 minutes, afilm having a film thickness of about 15 μm was obtained. The film wasthen exposed to energy of about 400 mJ/cm² from the exposure machine(with a power of 7 kW) and then developed with 1 wt % (by weight) ofsodium carbonate developer for 1 minute. After that, the hard bakingprocedure was carried out at a wavelength of 500 nm to 4000 nm for 10 to30 minutes to obtain a developed pattern with heat resistance.

COMPARATIVE EXAMPLE 2

3.00 g of the infrared absorber (SDO-C33) and 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide were added into 60.00 gof PSPI-1 and mixed uniformly to obtain the photosensitive polyimideresin composition PSPI-IR7. PSPI-IR7 was coated on the substrate byusing a wire bar. After the pre-baking procedure at 90° C. in the ovenfor 8 minutes, a film having a film thickness of about 15 μm wasobtained. The film was then exposed to energy of about 400 mJ/cm² fromthe exposure machine (with a power of 7 kW) and then developed with 1 wt% (by weight) of sodium carbonate developer for 1 minute. After that,the hard baking procedure was carried out at a wavelength of 500 nm to4000 nm for 10 to 30 minutes to obtain a developed pattern with heatresistance.

COMPARATIVE EXAMPLE 3

3.00 g of the infrared absorber (SDO-C33), 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, and 7.50 g of1,4-butanediol diglycidyl ether were added into 60.00 g of PSPI-1 andmixed uniformly to obtain the photosensitive polyimide resin compositionPSPI-IR2. PSPI-IR2 was coated on the substrate by using a wire bar.After the pre-baking procedure at 90° C. in the oven for 8 minutes, afilm having a film thickness of about 15 μm was obtained. The film wasthen exposed to energy of about 400 mJ-cm² from the exposure machine(with a power of 7 kW) and then developed with 1 wt % (by weight) ofsodium carbonate developer for 1 minute. After that, the hard bakingprocedure was carried out in nitrogen atmosphere at 200° C. in the hotair oven for 120 minutes to obtain a developed pattern with heatresistance.

COMPARATIVE EXAMPLE 4

3.00 g of the infrared absorber (SDO-C33) and 3.00 g ofbis(2,4,6-trimethylbenzoyl)phenylphosphine oxide were added into 60.00 gof PSPI-1 and mixed uniformly to obtain the photosensitive polyimideresin composition PSPI-IR7. PSPI-IR7 was coated on the substrate byusing a wire bar. After the pre-baking procedure at 90° C. in the ovenfor 8 minutes, a film having a film thickness of about 15 μm wasobtained. The film was then exposed to energy of about 400 mJ/cm² fromthe exposure machine (with a power of 7 kW) and then developed with 1 wt% (by weight) of sodium carbonate developer for 1 minute. After that,the hard baking procedure was carried out in nitrogen atmosphere at 200°C. in the hot air oven for 120 minutes to obtain a developed patternwith heat resistance.

The photosensitive polyimide resin compositions of the Examples of thepresent invention and the Comparative Examples were soaked in thesolvent, such as 10% HCl, 10% H₂SO₄, and 10% NaOH for 30 minutes,respectively, and then tested for the solvent resistance. The resultsare shown in Table 1 below:

TABLE 1 Formulations of photosensitive polyimide resin compositions andtest results of solvent resistance thereof Infrared absorber [component(a)] percentage¹(wt %) Epoxy$\frac{W_{(a)}}{W_{total} \times 0.5} \times 100\%$ compound [component(b)] percentage Photosensitive polyimide [component (c)] Photo initiator[component (d)] percentage Hard baking conditions Photosensitivepolyimide resin composition SDO-C33 Carbon black$\frac{W_{(b)}}{W_{total} \times 0.5} \times 100\%$$\frac{W_{(c)}}{W_{total} \times 0.5} \times 100\%$$\frac{W_{(d)}}{W_{total} \times 0.5} \times 100\%$ means Temp. timeSolvent resistance² Example 1 0.74 — 18.38 73.53 7.35 Infrared 180° C.10 min ◯ rays Example 2 6.90 — 17.23 68.97 6.90 Infrared 180° C. 10 min◯ rays Example 3 — 6.90 17.23 68.97 6.90 Infrared 180° C. 10 min ◯ raysExample 4 5.00 — 40.00 50.00 5.00 Infrared 180° C. 10 min ◯ rays Example5 7.35 — 18.38 73.53 0.74 Infrared 180° C. 10 min ◯ rays Comparative — —18.52 74.07 7.41 Infrared 180° C. 10 min X Example 1 rays Comparative8.33 — — 83.34 8.33 Infrared 180° C. 10 min X Example 2 rays Comparative6.90 — 17.23 68.97 6.90 Hot air 200° C. 120 min  X Example 3 ovenComparative 8.33 — — 83.34 8.33 Hot air 180° C. 120 min  X Example 4oven ¹Percentage represents the weight percentage (Wt %) of the “solidweight” of the photosensitive polyimide resin composition that thecomponent accounts for. The solid percentage will vary depending on theformulation. The said in the Examples of the present invention or theComparative Examples accounts for and therefore the denominator wasmultiplied by 0.5 in 50% of the total weight of the composition colloid,the calculation. ²The solvent resistance test was carried out by soakingthe finished products in 10% HCl, 10% H₂SO₄, and 10% NaOH, respectively,for 30 minutes and performing the cross-cut (100/100) test to confirmwhether or not the film of the photosensitive polyimide resincomposition had peeled off. In the case of peeling, it meant that thecomposition was insufficiently crosslinked and recorded as X.

The photosensitive polyimide resin compositions of Examples 1-2 of thepresent invention used the same photo initiator and epoxy compound, butadded different weight percentages (wt %) of dyes as the infraredabsorber. Example 3 chose the pigment as the infrared absorber. Examples4-5 used the same infrared absorber (dyes) and photo initiator, butadded different weight percentages (wt %) of epoxy compound. After hardbaking by infrared rays, all the photosensitive polyimide resincompositions of the Examples described above had excellent solventresistance.

In contrast, the photosensitive polyimide resin composition ofComparative Example 1 was not added with the infrared absorber, andafter the hard baking procedure with infrared rays having a wavelengthof 500 nm to 4000 nm for 10 to 30 minutes, crosslinking was notachieved, resulting in poor solvent resistance. Though thephotosensitive polyimide resin composition of Comparative Example 2 hadinfrared absorber, it didn't contain the epoxy compound. After the hardbaking procedure with the same infrared rays, the solvent resistance wasfound to be equally poor. The formulation of the photosensitivepolyimide resin composition of Comparative Example 3 was the same asthat of Example 2 except that the hot baking was carried out by hot airdrying for a longer period of time (120 minutes). However, the solventresistance of the film was poorer. The photosensitive polyimide resincomposition of Comparative Example 4 was the same as that of ComparativeExample 2. Both comprised the infrared absorber but didn't contain theepoxy compound. Though the hard baking was carried out in the hot airoven for a longer period of time (120 minutes), the chemical resistancewas still poor.

The traditional polyimide or photosensitive polyimide needs to be heatedat a high temperature of about 350° C. for up to 2 hours for curing andbeing applicable in electronic components. The photosensitive polyimideresin composition of the present invention can achieve sufficientcross-linking and shaping inside the photosensitive polyimide resincomposition using a lower temperature and a shorter heating time byadding the infrared absorber and the epoxy compound in cooperation ofthe infrared irradiation. Therefore, not only is the yield improved(without high temperature damage to the electronic components), but theprocess time is significantly saved.

While the present invention has been illustrated above by the Examples,these Examples are not intended to limit the invention. Equivalentimplementations or alterations may be made to these Examples by thoseskilled in the art without departing from the scope of the spirit of theart of the invention. Therefore, the protection scope of the presentinvention should be determined by the appended claims.

What is claimed is:
 1. A photosensitive polyimide resin composition, comprising: (a) a dye or a pigment serving as an infrared absorber, accounting for 5-40% of the solid weight of the photosensitive polyimide resin composition; (b) an epoxy compound accounting for 5-40% of the solid weight of the photosensitive polyimide resin composition; (c) a photosensitive polyimide having a structure of formula (1):

wherein m and n are independently 1 to 600; X is a tetravalent organic group, a main chain of which contains an alicyclic group; Y is a divalent organic group, a main chain of which contains a siloxane group; Z is a divalent organic group, a side chain of which at least contains a phenolic group or a carboxyl group; and the photosensitive polyimide accounts for 30-90% of the solid weight of the photosensitive polyimide resin composition; and (d) a photo initiator accounting for 0.1-15% of the solid weight of the photosensitive polyimide resin composition, wherein the epoxy compound is neopentyl glycol diglycidyl ether, 1,4-butanediol diglycidyl ether, 1,2-cyclohexanedicarboxylic acid diglycidyl ester, bisphenol A diglycidyl ether, 1,2-propanediol diglycidyl ether, trimethylolpropane triglycidyl ether, glycerol tripropoxy triglycidyl ether, m-benzenediol diglycidyl ether, or a combination thereof.
 2. The photosensitive polyimide resin composition of claim 1, wherein the dye is a metal complex dye or a condensed polycyclic dye.
 3. The photosensitive polyimide resin composition of claim 1, wherein the pigment is an organic pigment or an inorganic pigment.
 4. The photosensitive polyimide resin composition of claim 1, wherein X of formula (1) doesn't contain a benzene ring.
 5. The photosensitive polyimide resin composition of claim 4, wherein X of formula (1) is


6. The photosensitive polyimide resin composition of claim 1, wherein Y of formula (1) is

wherein p=0-20.
 7. The photosensitive polyimide resin composition of claim 1, wherein the phenolic group or the carboxyl group of Z in formula (1) accounts for 5-30% of the total number of moles of the photosensitive polyimide.
 8. The photosensitive polyimide resin composition of claim 7, wherein Z of formula (1) is


9. The photosensitive polyimide resin composition of claim 1, wherein the photo initiator is bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, 2-phenylmethyl-2-dimethylamino-1-1-(4-morpholinophenyl)-butanone, (2,4,6-trimethylbenzyl)diphenylphosphine oxide, bis(2,6-difluoro-3-(1-hydropyrro-1-yl)-phenyl)titanocene, 4,4′-bis(dimethylamino)diphenyl ketone, 4,4′-bis(diethylamino) diphenyl ketone, or N-phenyl diethanolamine.
 10. The photosensitive polyimide resin composition of claim 1, wherein the photosensitive polyimide resin composition is used for forming an insulating film. 